Selective remanent ambipolar charge transport in polymeric field-effect transistors for high-performance logic circuits fabricated in ambient.
نویسندگان
چکیده
Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.
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عنوان ژورنال:
- Advanced materials
دوره 26 44 شماره
صفحات -
تاریخ انتشار 2014